OT0102 500nm Trimmed Low Power Bandgap

The BG102 is a 1.2V CMOS low power, medium precision CMOS bandgap cell
designed for use in a wide variety of mixed signal device applications.

The base design is implemented with lambda-based sizing and portable
layout constructs for maximum ease of process porting. The architecture
supports operation down to 1.5V.

Features

  • Precision of ±0.5% over process, temperature, and voltage.
  • 4 Bit temperature coefficient trimming.
  • Optional 4 bit voltage trimmer.
  • 1.2V output.
  • DC PSRR -100dB, Peak PSRR –20dB.
  • 15µV RMS output noise
  • 3.3 or 5 Volt supply voltage options with option for separate substrate connections.
  • Power down input.
  • Uses manufacturer supported bipolar structures.
  • 500nA positive temperature coefficient current source.
  • Bullet-proof start-up circuit.
  • Stable to infinite capacitive load.
  • Start-up time less than 5µS.
  • Base cell area 0.03mm2 in 0.35µ CMOS.
  • 1P3M CMOS process compatibility.

Typical Applications

  • Temperature reference.
  • LDO.
  • Bias generation.

Service Features

  • 5 Weeks lead time for process ports.
  • Available support for manufacturing and characterization.

Standard Deliverables:

  • Metal layout outline.
  • Flat GDS layout (for some IP this is delivered to the fab for integration).
  • Verilog model.
  • SPICE flat netlist. 
  • Basic SPICE testbench. Allows for verification of basic function.
  • Integration notes, and integration consulting support.
  • Test implementation notes.