Products

OT0102af Trimmed Low Power Bandgapbgs

The BG102 is a 1.2V CMOS low power, high precision CMOS band gap cell designed for use in a wide variety of mixed signal device applications.

The base design is implemented with lambda-based sizing and portable layout constructs for maximum ease of process porting. The architecture supports operation down to 1.5V.

Features

  • Precision of ±0.2% over process, temperature, and voltage.
  • 4 Bit temperature coefficient trimming.
  • Optional 4 bit voltage trimmer.
  • 1.2V output.
  • DC PSRR -100dB, Peak PSRR –20dB.
  • 15µV RMS output noise
  • 3.3 or 5 Volt supply voltage options with option for separate substrate connections.
  • Power down input.
  • Uses manufacturer supported bipolar structures.
  • 500nA positive temperature coefficient current source.
  • Bullet-proof start-up circuit.
  • Stable to infinite capacitive load.
  • Start-up time less than 5µS.
  • Base cell area 0.03mm2 in 0.35µ CMOS.
  • 1P3M CMOS process compatibility.

 

Typical Applicationsbgpx200

  • Temperature reference.
  • LDO.
  • Bias generation.

Service Features

  • 5 Weeks lead time for process ports.
  • Available support for manufacturing and characterization.

Standard Deliverables:

  • Metal layout outline.
  • Flat gds layout (for some IP this is delivered to the fab for integration).
  • Verilog model.
  • Spice flat netlist. 
  • Basic spice testbench. Allows for verification of basic function.
  • Integration notes, and integration consulting support.
  • Test implementation notes.

Service

  • Available support for manufacturing and characterization.
  • Available translation to your design style.
  • Available on-site design review.
  • Source licensing available.

Simple License Options:

IP Multi-Use Package

  • Allows usage on multiple designs.
  • Flat gds layout, netlist, integration notes, data sheet, layer map.
  • Available on site consulting and design integration training / support.
  • No Royalties.

Source Ownership

  • Full source ownership and required documentation and training to allow modification, derivation, porting.
  • Hierarchical gds layout, schematic, netlist, integration notes, data sheet, design notes, test benches, layer map.
  • Available on site consulting and design integration training / support / porting to your system.
  • No Royalties.

Band Gap Experience bg2px300

We have implemented a number of band gap functions in technologies from 2u to 65n CMOS.

  • Multiple silicon implementations.
  • Variations from compact size to high precision 2nd order types.
  • 1 volt micro-power versions.
bgpx200

Bandgap Experience

bg2px300
0.1% Bandgap in 65n

Obsidian has implemented a number of  band gap functions in technologies from 2u to 65n CMOS.

  • Multiple silicon implementations.

  • Variations from compact size to high precision 2nd order types.

  • 1 volt micro-power versions.

  • Lazer or direct trim control.

See OT0102af.

 

bgpx200
Trimmed Bandgap

 

 

 

 

 

 

 

 

 

highlights

2/21/17 - OT ships ams aH18 clock mutiplier PLL.

12/9/16 - New USB PD Development board.

5/22/16 - OT ships 130nm USB Type-C IP.

4/1/15 - Obsidian Announces USB 3.1 Cable Marker Chip. See more.

5/8/14 - Obsidian demonstates USB PD over Type-C. See more.

11/4/13 - Obsidian ships 4th PD IP version.

1/15/13 - Obsidian provides technology for CES demo.


 
USB Power Delivery IP

12/5/10 - 0.35µ Ip demo chip functional.